[24p-E302-1~16] CS.9 Code-sharing Session of 13.7 & 15.6

[24p-E302-12] NO annealing simulation of 4H-SiC/SiO₂ by charge-transfer type molecular dynamics

〇Yuki Ohuchi¹, Hidenori Saeki¹, Hiroki Sakakima², Satoshi Izumi² (1.Fuji Electric, 2.Univ. of Tokyo)

Keywords:Silicon Carbide, molecular dynamics calculations

In SiC-MOSFETs, annealing with NO is effective in reducing the interface states, but the detailed mechanism is still under debate. Recently, thermal oxidation simulations were performed at the 4H-SiC/SiO₂ interface using the classical molecular dynamics method, which considers atomic charge transfer, and the formation of orientation-dependent reaction barriers and residual C defects was reported. In this presentation, we report the results of molecular dynamics calculations simulating NO annealing by creating a charge-transfer type interatomic potential consisting of Si-O-C-N with newly added N.