Mobility change of 4H-SiC(0001) Trench MOSFET by mechanical stress

Naotoshi Hikosaka, Eiji Kagoshima, Shigehisa Shibayama, Mitsuo Sakashita, Hidemoto Tomita, Tsuyoshi Nishiwaki, Hirokazu Fujiwara, Osamu Nakatsuka, Wakana Takeuchi

Presentation information

Oral presentation

CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6

[24p-E302-1~16] CS.9 Code-sharing Session of 13.7 & 15.6

Thu. Mar 24, 2022 2:00 PM - 6:15 PM E302 (E302)

Masashi Kato(Nagoya Inst. of Tech.), Takuma Kobayashi(Osaka Univ.)

5:15 PM - 5:30 PM

[24p-E302-13] Mobility change of 4H-SiC(0001) Trench MOSFET by mechanical stress

〇Naotoshi Hikosaka¹, Eiji Kagoshima², Shigehisa Shibayama³, Mitsuo Sakashita³, Hidemoto Tomita², Tsuyoshi Nishiwaki², Hirokazu Fujiwara², Osamu Nakatsuka³, Wakana Takeuchi¹ (1.Aikoudai Inst.Tech, 2.MIRISE Technologies, 3.Nagoya Univ)

Keywords:4H-SiC

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