[24p-E307-1~11] 12.3 Functional Materials and Novel Devices

[24p-E307-6] Stabilization of Interfacial Polarization and Induction of Polarization Hysteresis in Organic Devices

〇Seiya Yokokura^1,2, Akihiro Tomimatsu², Jun Harada³, Yukihiro Takahashi³, Yuto Nakamura⁴, Hideo Kishida⁴, Rie Suizu², Michio Matsushita², Kunio Awaga² (1.Hokkaido Univ., 2.Nagoya Univ., 3.Hokkaido Univ. Sci., 4.Nagoya Univ. Eng.)

Keywords:organic ferroelectrics, organic memory devices, polarization

Molecule-based ferroelectrics has attracted much attention because of its advantages, such as flexibility, light weight, and low environmental load. In the present work, we examined an organic metal|insulator|semiconductor|insulator|metal (MISIM) device structure to stabilize the interfacial polarization in the S layer and to induce polarization hysteresis even without bulk ferroelectrics.