[24p-P10-1~4] 16.3 シリコン系太陽電池

▲ [24p-P10-2] Contact resistance between PH₃ plasma-ion-implanted p-type amorphous silicon and ITO at various flash lamp annealing conditions

〇(M2)Ukei Riyuu¹、Huynh Thi Cam Tu¹、Noboru Yamaguchi²、Keisuke Ohdaira¹ (1.JAIST、2.ULVAC Inc.)

キーワード：contact resistance, Phosphine Plasma Ion Implantation, FLA

In this work, the contact resistivity between the PII p-a-Si and indium tin oxide (ITO) have been evaluated at variation of FLA conditions.We prepared samples consisting of p-a-Si/ i-a-Si /n-c-Si/ SiN_x, which were formed by catalytic chemical vapor deposition (Cat-CVD). Then PII and FLA were performed on p-a-Si. Finally ITO film and electrodes were formed on p-a-Si film. We evaluated the contact resistance between the PII p-a-Si and ITO by transfer length method (TLM). A contact resistance is estimated to be 0.2–0.7 Ω⋅cm²after FLA at a fluence of 12–22 J/cm². The contact resistance slightly increases with an increase in FLA fluence. We proposed that one of the reasons for this phenomenon is due to the activation of B atoms which are compensated with the activated P atoms. Another possible reason to be considered is the creation of metastable defects in a-Si by high irradiation intensity.