[25a-D114-1~7] 15.5 Group IV crystals and alloys

[25a-D114-2] Influence of Mg diffusion on Mg-induced lateral crystallization of amorphous Ge / SiO₂

〇Atsuki Morimoto¹, Rikuto Abe¹, Anna Hirai¹, Towa Hirai¹, Kenichiro Takakura¹, Isao Tunoda¹ (1.NIT(KOSEN),Kumamoto College)

Keywords:semiconductor, crystallinity

We have investigated focused on Mg concentration that Mg induced lateral crystallization of amorphous Ge on SiO₂/Si substrate.The results demonstrated the Mg induced lateral crystallization of amorphous Ge insulating substrate was the thicker the Mg film, the larger the lateral growth distance. It is essential to have about 40% Mg atoms in the amorphous Ge for Mg induced growth of amorphous Ge. It was also found the total amount of Mg atoms diffusing into the Ge affected the lateral growth distance.