Highly conductive Mg-doped Al-rich AlGaN grown on AlN single crystal substrates

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 25, 2022 9:00 AM - 12:00 PM E203 (E203)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Momoko Deura(Univ. of Tokyo)

10:00 AM - 10:15 AM

〇Shun Washiyama¹, GuoDong Hao¹, Tomonori Matsushita¹, Shin-ichiro Inoue¹ (1.NICT)

Keywords:p-type AlGaN, Doping, Point defect