[25a-E301-1~9] CS.9 Code-sharing Session of 13.7 & 15.6

[25a-E301-2] Quantitation of the concentration of silicon vacancies in 4H-SiC formed by electron beam irradiation

〇(M1)Shu Motoki^1,2, Shin-ichiro Sato², Seiichi Saiki², Yuta Masuyama², Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST)

Keywords:Silicon Vacancy, Electron Spin Resonance, Optically Detected Magnetic Resonance