[25a-F307-1~8] 6.4 Thin films and New materials

[25a-F307-7] Growth of thick α-Ga₂O₃ films

〇Takeru Wakamatsu¹, Hitoshi Takane¹, Kentaro Kaneko¹, Katsuhisa Tanaka¹ (1.Kyoto Univ.)

Keywords:gallium oxide

α-Ga₂O₃, which is a widebandgap semiconductor material, has received attention for applications. It is important the growth of thick films for application and characterization of α-Ga₂O₃. In this work, we investigate the influence of substrate temperature and source solution composition on the growth of α-Ga₂O₃ thick films by using mist-CVD. In the growth of thick films, α and κ-phase were grown at low HCl concentration of source solution ,while only α phase was grown at high HCl concentration. Furthermore, it was found that the lower substrate temperature is and the higher the concentration of HCl is, the more the film thickness increase.