The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[25a-F307-1~8] 6.4 Thin films and New materials

Fri. Mar 25, 2022 9:15 AM - 11:30 AM F307 (F307)

Daichi Oka(Tohoku Univ. ), Hiroshi Takatsu(Kyoto Univ. )

11:00 AM - 11:15 AM

[25a-F307-7] Growth of thick α-Ga2O3 films

〇Takeru Wakamatsu1, Hitoshi Takane1, Kentaro Kaneko1, Katsuhisa Tanaka1 (1.Kyoto Univ.)

Keywords:gallium oxide

α-Ga2O3, which is a widebandgap semiconductor material, has received attention for applications. It is important the growth of thick films for application and characterization of α-Ga2O3. In this work, we investigate the influence of substrate temperature and source solution composition on the growth of α-Ga2O3 thick films by using mist-CVD. In the growth of thick films, α and κ-phase were grown at low HCl concentration of source solution ,while only α phase was grown at high HCl concentration. Furthermore, it was found that the lower substrate temperature is and the higher the concentration of HCl is, the more the film thickness increase.