[25p-D113-1~5] 15.2 II-VI and related compounds

▲ [25p-D113-2] Growth and characterization of phosphorus-doped ZnTe thin films by MBE

〇(M1)Muhamad Mustofa¹, Katsuhiko Saito¹, Qixin Guo¹, Tooru Tanaka¹ (1.Saga University)

Keywords:Molecular Beam Epitaxy (MBE), ZnTe, Phosphorus doping

Multiband or intermediate band solar cell (IBSC) is viable approach to achieve high solar power conversion efficiencies.To increase the efficiency of solar cell, not only the multiband layer but also the other layer in solar cell structure needs to be improved, and especially the conductivity control of p- type ZnTe epitaxial layer is important. Phosphorus (P) is expected as a good candidate for doping material on ZnTe. In this study we investigated the MBE growth of P-doped ZnTe using InP as dopant source where P is supplied as P2 molecular beam. P-doped ZnTe thin films were grown by MBE on Ga-doped ZnTe (100) substrates. Photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) were performed to characterize the samples.