[25p-D114-1~16] 15.5 Group IV crystals and alloys

[25p-D114-11] Strain Distribution of Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping

〇Ichiro Hirosawa^1,2, Kazutoshi Yoshioka³, Gai Ogasawara³, Kirito Cho³, Yuta Ito³, Sho Sugawa^1,3, Takeshi Watanabe⁴, Ryo Yokogawa^2,3, Atsushi Ogura^2,3 (1.SAGA-LS, 2.MREL, 3.Meiji Univ., 4.JASRI)

Keywords:Si, strain, nanowire

The lattice strain distribution in C-doped Si nanowires formed on Si(001) substrate was investigated by X-ray reciprocal lattice space mapping around 337 diffraction. The two peaks observed in the nanowires with a long side of 10000 nm parallel to [110] and a short side of 100 nm in width parallel to [-110] can be explained by a model in which the lattice strain is distributed over the entire nanowire. On the other hand, a diffuse scattering-like pattern was observed around the single peak in the nanowire with a short side width of 500 nm, which suggests that the lattice spacings in [-110] direction are constant in the center region of the nanowire.