Improvement of hole mobility and reduction of leakage current of strained Si / relaxed SiGe / Si(110) heterostructure p-MOSFET

Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Chihiro Sakata, Junji Yamanaka, Kosuke Hara, Kentarou Sawano, Kiyokazu Nakagawa, Keisuke Arimoto

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[25p-D114-1~16] 15.5 Group IV crystals and alloys

Fri. Mar 25, 2022 1:00 PM - 5:15 PM D114 (D114)

Keisuke Arimoto(Univ. of Yamanashi), Katsunori Makihara(Nagoya Univ.)

5:00 PM - 5:15 PM

[25p-D114-16] Improvement of hole mobility and reduction of leakage current of strained Si / relaxed SiGe / Si(110) heterostructure p-MOSFET

〇Taisuke Fujisawa¹, Atsushi Onogawa¹, Miki Horiuchi¹, Chihiro Sakata¹, Junji Yamanaka¹, Kosuke Hara¹, Kentarou Sawano², Kiyokazu Nakagawa², Keisuke Arimoto¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

Keywords:Strained Si, p-MOSFET, Electrical Characteristics

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