[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [25p-E202-4] Low-temperature activation mechanism in Hydrogen-doped In-Ga-Zn-O films for flexible device applications

〇(PC)Rostislav Velichko¹, Yusaku Magari², Mamoru Furuta¹ (1.Kochi Univ. of Tech., 2.Shimane Univ.)

Keywords:oxide semiconductors, hydrogen in In-Ga-Zn-O, low-temperature activation

Low-temperature activation of oxide semiconductor materials such as In-Ga-Zn-O (IGZO) is a key approach for their utilization in flexible devices. We previously reported that the activation temperature can be reduced to 150 °C by hydrogen-doped IGZO (IGZO:H), demonstrating a strong potential of this approach. In this study, we investigated the mechanism for reducing the activation temperature of the IGZO:H films. It was found that the starting point of oxygen diffusion into the film strongly correlates with the H content in the film and can be reduced up to 100 °C. The oxygen diffusion into the film during annealing plays an important role for reducing oxygen vacancies and subgap states especially for near Fermi level. In this presentation, we will discuss the mechanisms leading to defect passivation and carrier reduction in IGZO:H films upon low-temperature annealing.