[25p-E203-1~17] 15.4 III-V-group nitride crystals

▲ [25p-E203-11] The new material wurtzite AlP_yN_1-y

〇Markus Pristovsek¹ (1.CIRFE, IMaSS, Nagoya University)

Keywords:wurtzite nitrides, HEMT, cathodoluminescence

The new material wurtzite AlP_yN_1-y is introduced. Since P is larger than N but smaller than Al, the material is only stochiometric in the absence of compressive strain, i.e. for P content <11% when grown on GaN. AlP_yN_1-y can replace Al_1-xSc_xN, Al_1-xIn_xN, or Al_xGa_1-xN as barrier material in high electron mobility transistors, since it is easier to manufacture than AlScN or AlInN but offers a higher polarisation induced charge than AlGaN.
This exploratory work reports the first two-dimensional electron gas. A sheet carrier density of 10¹³ cm^-2 with 400 cm²/Vs mobility at 30 K on non-optimized structures show the potential of AlPN. First band edge measurements using room temperature cathodoluminescence show a huge bowing of 20 eV, which is currently under further investigation.