16:15 〜 16:30
▲ [25p-E203-11] The new material wurtzite AlPyN1-y
キーワード：wurtzite nitrides, HEMT, cathodoluminescence
The new material wurtzite AlPyN1-y is introduced. Since P is larger than N but smaller than Al, the material is only stochiometric in the absence of compressive strain, i.e. for P content <11% when grown on GaN. AlPyN1-y can replace Al1-xScxN, Al1-xInxN, or AlxGa1-xN as barrier material in high electron mobility transistors, since it is easier to manufacture than AlScN or AlInN but offers a higher polarisation induced charge than AlGaN.
This exploratory work reports the first two-dimensional electron gas. A sheet carrier density of 1013 cm-2 with 400 cm2/Vs mobility at 30 K on non-optimized structures show the potential of AlPN. First band edge measurements using room temperature cathodoluminescence show a huge bowing of 20 eV, which is currently under further investigation.
This exploratory work reports the first two-dimensional electron gas. A sheet carrier density of 1013 cm-2 with 400 cm2/Vs mobility at 30 K on non-optimized structures show the potential of AlPN. First band edge measurements using room temperature cathodoluminescence show a huge bowing of 20 eV, which is currently under further investigation.