[25p-E203-1~17] 15.4 III-V-group nitride crystals

[25p-E203-5] Study on the polarity control of GaN growth on Si by sputtering.

〇Takahiro Nagata¹, Yuya Suemoto², Yoshihiro Ueoka², Masami Mesuda², Liuwen Sang¹, Toyohiro Chikyow¹ (1.NIMS, 2.Tosoh Corp.)

Keywords:Nitride semiconductor, Sputtering, polarity

GaN is attracting attention as a next-generation power device material, and an on Si structure is desirable from the viewpoint of further reducing manufacturing costs. In addition, the sputtering method has advantages such as a low-temperature process. On the other hand, the polarity of GaN needs to be controlled according to the device applications due to the polarity dependence of its physical properties. In this presentation, we apply the oxygen transfer-induced polarity reversal to the growth of GaN on Si substrates and report the polarity control of GaN thin films on Si substrates fabricated by sputtering in combination with the intended oxidation process.