n-type doping in N-polar GaN via sputtering and its application to nitride devices

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 25, 2022 1:30 PM - 6:15 PM E203 (E203)

Tsutomu Araki(Ritsumeikan Univ.), Akihiko Kikuchi(Sophia Univ.), Masato Oda(Wakayama Univ.)

2:45 PM - 3:00 PM

〇Yusuke Masuda¹, Kohei Ueno¹, Atushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS,Tokyo Univ.)

Keywords:GaN, Nitrogen polarity, sputtering