[25p-E307-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[25p-E307-1] Formation of wiring by new electroplating method without additives

〇Haruo Iwatsu¹ (1.FAST, Kumamoto Univ.)

Keywords:semiconductor, wiring, plating

In order to keep the fine wiring resistance of semiconductor integrated circuits low, it is necessary to increase the crystal grain size of the wiring film, and we have realized an additive-free fine wiring film with a large crystal grain size using new electroplating technology. In order to further reduce the resistance, it is desired to thin the barrier membrane having low electrical conductivity and to eliminate the seed film. This time, we report the embedding of Cu fine wiring on the base barrier membrane Ru without a seed film using the new electrolytic plating technology.