[25p-E307-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[25p-E307-13] Development of Direct Bonding Technology Using Pureozone

〇Toshinori Miura¹, Mitsuru Kekura¹, Kazuhiko Murai¹ (1.Meiden Nano Process Innovation Inc.)

Keywords:semiconductor, direct bonding

The recent increase in the amount of information via electronic devices accompanying the shift to IoT requires the further sophistication of semiconductor devices. Currently, miniaturization and integration are the technical focus of advanced semiconductors, but today, the landing is high integration by conventional two-dimensional miniaturization that is approaching the molecular size, and the technology frontier is three-dimensional integrated circuits (3D-IC). In addition to miniaturization, stacking by mounting technology, which has continued to develop for decades, has progressed to attempts to directly bond sensors and semiconductor chips with various functions. In this talk, we will report on the pre-bonding surface modification and bonding technology using about 100% high-concentration ozone gas as a new attempt of pre-bonding surface treatment technology related to direct bonding.