The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[25p-E307-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Fri. Mar 25, 2022 1:30 PM - 5:30 PM E307 (E307)

Takeshi Momose(Univ. of Tokyo), Osamu Sugiura(千葉工大)

2:00 PM - 2:15 PM

[25p-E307-3] Ion Reduction Reaction under Electrostatic Field by New Electroplating Technology

Shota Sato1, Minako Yasuda1, Haruo Iwatsu2,3, 〇Takeshi Hashishin4,3 (1.GSST, Kumamoto Univ., 2.POIE, Kumamoto Univ., 3.Inst. Ind. Nano Mat., 4.FAST, Kumamoto Univ.)

Keywords:electroplating, electrostatic field, ion reduction

Electroplating utilizes the reduction of cations in the solution on the cathode surface. Since the surface of the cathode is negative and the cations in the solution are positive, an electric double layer is formed before the reduction, but the reduction occurs upon contact between the two. If the stop and start of the reduction can be controlled, it can be applied to the formation technology of LSI copper micro-wiring. In this study, the electrostatic field was used to control the reduction of copper ions in the copper sulfate plating bath, and the conditions for controlling the copper ion reduction reaction by the electrostatic field were investigated from the correlation between the applied voltage of the electrostatic field and the thickness of the deposited copper film.