[25p-F307-1~16] 6.4 薄膜新材料

▼ [25p-F307-2] Physical vapor deposition of conductive metal–organic framework thin film

〇(D)Seoungmin Chon¹、Ryo Nakayama¹、Shunta Iwamoto¹、Ryota Shimizu¹、Taro Hitosugi¹ (1.Tokyo Tech)

キーワード：conductive metal-organic framework, thin films, Infrared pulsed laser deposition

Metal–organic framework (MOF) is a porous material that consists of coordinated metal ions and organic ligands. For electronics device applications, the fabrication of MOF thin films is required. So far, MOF thin films are mostly fabricated in wet processes, not suitable for multilayer devices. In contrast, there are only limited reports on the fabrication of MOF thin films in dry processes. In this study, we utilize infrared-pulsed laser deposition (IR-PLD) as a method of physical vapor deposition and fabricate a conductive MOF thin film, Cu₃(HHTP)₂ (HHTP = 2,3,6,7,10,11-hexahydroxytriphenylene).