[25p-P11-1~16] 13.7 Compound and power devices, process technology and characterization

[25p-P11-14] SiC complementary JFET logic gate operation at 350 ℃

〇Mitsuaki Kaneko¹, Masashi Nakajima¹, Qimin Jin¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, Complementary, JFET

Integrated circuits (ICs) that can operate at high temperature (≥ 300℃) is highly desired for a wide variety of applications including automotive, aerospace, space exploration, and deep-well drilling. However, this has been a major challenge since conventional silicon-based ICs cannot operate at such a high temperature due to the material limitation of silicon and, even with wide bandgap semiconductors (operational at high temperature), circuit configuration with small power consumption and circuit operation which can be simulated within a wide temperature range have never been demonstrated. Here, we show a novel complementary logic gate operation at 350 ℃ (beyond silicon limit) composed of silicon carbide (SiC) junction field-effect transistors (JFETs). The complementary JFET (CJFET) logic gates operate with a single and low supply voltage (1.4 V) from room temperature to 350 ℃, leading to several orders of magnitude smaller power consumption compared to other wide-bandgap-semiconductor-based circuits.