[25p-P11-1~16] 13.7 Compound and power devices, process technology and characterization

[25p-P11-15] Characteristics of 4H-SiC PD and Single-pixel Device for a Radiation Resistant Image Sensor

〇(M1)Masayuki Tsutsumi¹, Tatsuya Meguro¹, Kazuya Kawamura¹, Takeshi Ohshima², Yasunori Tanaka³ (1.RNBS, Hiroshima Univ., 2.QST, 3.AIST)

Keywords:SiC, image sensor, Photodiode

There is a need for semiconductor devices that can be used in extreme environments such as high temperature and high radiation, which current electronics cannot adapt to. An image sensor is particularly vulnerable to radiation. In order to realize a radiation-resistant image sensor, we have been developing an image sensor based on silicon carbide, a wide bandgap semiconductor. In this study, UV photodiodes and single pixel devices were fabricated on a 4H-SiC substrate and evaluated.