Oral presentation

[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

Tue. Mar 22, 2022 9:00 AM - 12:15 PM E302 (E302)

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[22a-E302-1] Device Simulation of Output Admittance of HEMT’s

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Tsutomu Ikegami¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (1.AIST)

9:15 AM - 9:30 AM

[22a-E302-2] 1/f noise measurement on AlGaN/GaN HEMT TLM

〇koshi Katakura¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech, 2.Tokyo Tech IIR)

9:30 AM - 9:45 AM

[22a-E302-3] Buffer Layer Impurity Dependence of Current Collapse of AlGaN/GaN HEMTs Fabricated on GaN Substrates

〇Hidemasa Takahashi¹, Yuji Ando¹, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NITech)

9:45 AM - 10:00 AM

[22a-E302-4] Dependence of 2DEG mobility on carrier concentration in InAlN/AlN/GaN structures

〇(M1)Yuta Komori¹, Kazuo Tsutsui¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kiyotaka Miyano², Takashi Yoda², Ichirou Mizushima², Masayuki Tsukui² (1.Tokyo Tech, 2.NuFlare Technology)

10:00 AM - 10:15 AM

[22a-E302-5] Characterization of parallel conduction for the AlGaN/GaN MIS-HEMTs

〇Ryota Ochi¹, Tamotsu Hashizume¹, Taketomo Sato¹ (1.RCIQE)

10:15 AM - 10:30 AM

△ [22a-E302-6] Contact resistance improvement and modeling of stripe-recessed ohmic contact for InAlGaN/AlN/GaN HEMTs

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Naoya Okamoto¹, Naoki Hara¹, Toshihiro Ohki¹ (1.Fujitsu)

10:45 AM - 11:00 AM

△ [22a-E302-7] Multi-probe Hall measurements of AlGaN/GaN heterostructures under Ohmic-metals

〇kazuya Uryu^1,2, Shota Kiuch¹, Taku Sato², Toshi-kazu Suzuki¹ (1.JAIST, 2.ATL)

11:00 AM - 11:15 AM

△ [22a-E302-8] Device fabrication and characterization of AlGaInN/GaN HEMTs on single-crystal AlN substrate

〇(M1)Sakura Tanaka¹, Aiyoshi Inoue¹, Tomoyuki Kawaide¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

11:15 AM - 11:30 AM

[22a-E302-9] Isolation of N-polar GaN HEMT by TMAH solution

〇Takahiro Arai¹, Tomoya Aota¹, Isao Makabe², Ken Nakata², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd)

11:30 AM - 11:45 AM

[22a-E302-10] Fabrication and Characterization of N-Polar AlGaN/AlN High Electron Mobility Transistors

〇Shunsuke Matsuda¹, Daisuke Inahara¹, Wataru Matsumura¹, Lu You¹, Kazuya Ataka¹, Kouki Hanasaku¹, Yongzhao Yao², Yukari Ishikawa², Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.JFCC)

11:45 AM - 12:00 PM

△ [22a-E302-11] The increase of heat resistivity of N-polar GaN/AlGaN heterostructure transferred on Si substrate with AlN anti-diffusion layer inserted to interface of direct bonding

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Fumito Nakajima¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

12:00 PM - 12:15 PM

[22a-E302-12] Electrical characteristics of Si-doped GaN films deposited by sputtering on N-polar semi-insulating GaN substrates

〇Shinji Yamada¹, Taehui Lee¹, Masanori Shirai², Hiroki Kobayashi², Ryuichiro Kamimura², Manabu Arai¹, Tetsu Kachi¹, Jun Suda¹ (1.Nagoya Univ., 2.ULVAC)

Poster presentation

[25p-P11-1~16] 13.7 Compound and power devices, process technology and characterization

Fri. Mar 25, 2022 4:00 PM - 6:00 PM P11 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[25p-P11-1] Photocurrent measurement in n-GaN/p-GaAs junction fabricated by directly bonding GaN epi layer grown on free-standing substrate

〇(B)Shota Ishimi¹, Makoto Hirose¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

4:00 PM - 6:00 PM

[25p-P11-2] Effect of UV Exposure on Electrical Damage Introduced into p-Type GaN by Ar⁺ Ion Bombardments

〇Akira Toyotome¹, Yoshitaka Nakano¹, Retsuo Kawakami², Masahito Niibe³ (1.Chubu Univ., 2.Tokushima Univ., 3.Univ. Hyogo)

4:00 PM - 6:00 PM

[25p-P11-3] Electrical Defect Investigation of β-Ga₂O₃(-201) Single Crystals Annealed at High Temperatures in Vacuum

Akira Toyotome¹, 〇Yoshitaka Nakano¹ (1.Chubu Univ.)

4:00 PM - 6:00 PM

[25p-P11-4] Analysis of GaO_x Layer at Al₂O₃/GaN Interface using Photoelectron Holography

〇Shingo Kuwaharada¹, Mutsunori Uenuma¹, Hiroto Tomita¹, Masaki Tanaka¹, Sun Zexu¹, Yusuke Hashimoto¹, Tomohiro Matsushita¹, Yukiharu Uraoka¹ (1.NAIST)

4:00 PM - 6:00 PM

[25p-P11-5] Examination of reduction of GaN/SiO₂ hole traps by suppressing the formation of interfacial oxide layer

〇Tsurugi Kondo¹, Katsunori Ueno¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹ (1.Fuji Electric)

4:00 PM - 6:00 PM

[25p-P11-6] p-GaN parameter dependence of SRH lifetime obtained from IV characteristics for MOVPE-grown n⁺pp⁺ GaN diodes on GaN

〇Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita^2,3, Tetsu Kachi³ (1.Aichi Inst. of Tech., 2.Toyota Central R&D, 3.Nagoya Univ.)

4:00 PM - 6:00 PM

[25p-P11-7] Electrical properties of normally-off type AlGaN/GaN MIS-HEMTs
with SiO₂/Al₂O₃ double insulators fabricated by ALD Ⅱ

〇Keitaro Toda¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.NITech)

4:00 PM - 6:00 PM

[25p-P11-8] Normally-off GaN Polarization Super Junction (PSJ) Transistors

〇Shuichi Yagi¹, Hironori Nakamura¹, Yusuke Kamiyama¹, Ryoji Kitahara¹, Yuta Isa¹, Hironobu Narui¹, Atsushi Tanaka², Yoshio Honda², Hiroshi Amano² (1.POWDEC. K.K., 2.Nagoya Univ. IMaSS)

4:00 PM - 6:00 PM

[25p-P11-9] Effect of surface polarity on thermionic emission current-voltage characteristics of n-type GaN emitter

〇Naoki Yamamoto¹, Shigeya Kimura², Hisashi Yoshida², Hisao Miyazaki², Akihisa Ogino¹ (1.Shizuoka Univ., 2.Corporate Research & Development Center, Toshiba Corp.)

4:00 PM - 6:00 PM

[25p-P11-10] Effect of developer etching on AlGaN, GaN photolithography process and evaluation of new developer

〇Toshikazu Yamada¹, Tokio Takahashi¹, Masakazu Ito², Koji Sahara² (1.AIST, 2.Parker Co., Ltd.)

4:00 PM - 6:00 PM

[25p-P11-11] Mg recoil implantation into GaN with incident Nitrogen ion (6)

〇Toshikazu Yamada¹, Hisashi Yamada¹, Tokio Takahashi¹ (1.AIST)

4:00 PM - 6:00 PM

[25p-P11-12] Effects of defect levels in vicinity of GaN surface on C-V characteristics of MOS structure with Mg-doped p-GaN

〇(M1)Yuya Tamamura¹, Takahide Nukariya¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 6:00 PM

▲ [25p-P11-13] Investigation Trap Density in Oxide Layer of 4H-SiC MOS Capacitor During Long-Time Aging at 400^oC Ambient

〇Cuong Van Vuong¹, Kaho Koyanagi¹, Tatsuya Meguro¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ.)

4:00 PM - 6:00 PM

[25p-P11-14] SiC complementary JFET logic gate operation at 350 ℃

〇Mitsuaki Kaneko¹, Masashi Nakajima¹, Qimin Jin¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

4:00 PM - 6:00 PM

[25p-P11-15] Characteristics of 4H-SiC PD and Single-pixel Device for a Radiation Resistant Image Sensor

〇(M1)Masayuki Tsutsumi¹, Tatsuya Meguro¹, Kazuya Kawamura¹, Takeshi Ohshima², Yasunori Tanaka³ (1.RNBS, Hiroshima Univ., 2.QST, 3.AIST)

4:00 PM - 6:00 PM

[25p-P11-16] Prevention of Electrostatic Discharge during Two-Fluid Spray Cleaning

〇Hiroharu Suzuki¹, Yasuaki Fukuoka¹, Keiichi Ikeda¹, Sota Muto¹, Tatsuo Mori¹, Yusuke Ichino¹, Yoshiyuki Seike¹ (1.Aichi Inst. Tech.)

Sessions

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

[22a-E302-1] Device Simulation of Output Admittance of HEMT’s

[22a-E302-2] 1/f noise measurement on AlGaN/GaN HEMT TLM

[22a-E302-3] Buffer Layer Impurity Dependence of Current Collapse of AlGaN/GaN HEMTs Fabricated on GaN Substrates

[22a-E302-4] Dependence of 2DEG mobility on carrier concentration in InAlN/AlN/GaN structures

[22a-E302-5] Characterization of parallel conduction for the AlGaN/GaN MIS-HEMTs

△ [22a-E302-6] Contact resistance improvement and modeling of stripe-recessed ohmic contact for InAlGaN/AlN/GaN HEMTs

△ [22a-E302-7] Multi-probe Hall measurements of AlGaN/GaN heterostructures under Ohmic-metals

△ [22a-E302-8] Device fabrication and characterization of AlGaInN/GaN HEMTs on single-crystal AlN substrate

[22a-E302-9] Isolation of N-polar GaN HEMT by TMAH solution

[22a-E302-10] Fabrication and Characterization of N-Polar AlGaN/AlN High Electron Mobility Transistors

△ [22a-E302-11] The increase of heat resistivity of N-polar GaN/AlGaN heterostructure transferred on Si substrate with AlN anti-diffusion layer inserted to interface of direct bonding

[22a-E302-12] Electrical characteristics of Si-doped GaN films deposited by sputtering on N-polar semi-insulating GaN substrates

[25p-P11-1~16] 13.7 Compound and power devices, process technology and characterization

[25p-P11-1] Photocurrent measurement in n-GaN/p-GaAs junction fabricated by directly bonding GaN epi layer grown on free-standing substrate

[25p-P11-2] Effect of UV Exposure on Electrical Damage Introduced into p-Type GaN by Ar⁺ Ion Bombardments

[25p-P11-3] Electrical Defect Investigation of β-Ga₂O₃(-201) Single Crystals Annealed at High Temperatures in Vacuum

[25p-P11-4] Analysis of GaO_x Layer at Al₂O₃/GaN Interface using Photoelectron Holography

[25p-P11-5] Examination of reduction of GaN/SiO₂ hole traps by suppressing the formation of interfacial oxide layer

[25p-P11-6] p-GaN parameter dependence of SRH lifetime obtained from IV characteristics for MOVPE-grown n⁺pp⁺ GaN diodes on GaN

[25p-P11-7] Electrical properties of normally-off type AlGaN/GaN MIS-HEMTs
with SiO₂/Al₂O₃ double insulators fabricated by ALD Ⅱ

[25p-P11-8] Normally-off GaN Polarization Super Junction (PSJ) Transistors

[25p-P11-9] Effect of surface polarity on thermionic emission current-voltage characteristics of n-type GaN emitter

[25p-P11-10] Effect of developer etching on AlGaN, GaN photolithography process and evaluation of new developer

[25p-P11-11] Mg recoil implantation into GaN with incident Nitrogen ion (6)

[25p-P11-12] Effects of defect levels in vicinity of GaN surface on C-V characteristics of MOS structure with Mg-doped p-GaN

▲ [25p-P11-13] Investigation Trap Density in Oxide Layer of 4H-SiC MOS Capacitor During Long-Time Aging at 400^oC Ambient

[25p-P11-14] SiC complementary JFET logic gate operation at 350 ℃

[25p-P11-15] Characteristics of 4H-SiC PD and Single-pixel Device for a Radiation Resistant Image Sensor

[25p-P11-16] Prevention of Electrostatic Discharge during Two-Fluid Spray Cleaning

Authenticate

Sessions

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

△ [22a-E302-6] Contact resistance improvement and modeling of stripe-recessed ohmic contact for InAlGaN/AlN/GaN HEMTs

△ [22a-E302-7] Multi-probe Hall measurements of AlGaN/GaN heterostructures under Ohmic-metals

△ [22a-E302-8] Device fabrication and characterization of AlGaInN/GaN HEMTs on single-crystal AlN substrate

△ [22a-E302-11] The increase of heat resistivity of N-polar GaN/AlGaN heterostructure transferred on Si substrate with AlN anti-diffusion layer inserted to interface of direct bonding

[25p-P11-1~16] 13.7 Compound and power devices, process technology and characterization

▲ [25p-P11-13] Investigation Trap Density in Oxide Layer of 4H-SiC MOS Capacitor During Long-Time Aging at 400oC Ambient

Authenticate

▲ [25p-P11-13] Investigation Trap Density in Oxide Layer of 4H-SiC MOS Capacitor During Long-Time Aging at 400^oC Ambient