[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

[22a-E302-3] Buffer Layer Impurity Dependence of Current Collapse of AlGaN/GaN HEMTs Fabricated on GaN Substrates

〇Hidemasa Takahashi¹, Yuji Ando¹, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NITech)

Keywords:GaN, HEMT

In order to maximize the potential of GaN, we are developing GaN-HEMTs on GaN substrates. In this study, we investigated the effect of buffer layer impurities on the frequency dispersion of drain current collapse by using HEMT epis grown on a GaN substrate with different buffer layer configurations. When the frequency dispersion of the maximum drain current was compared, a large difference was found due to the difference in buffer layer impurities.