Analysis of GaOx Layer at Al2O3/GaN Interface using Photoelectron Holography

Shingo Kuwaharada, Mutsunori Uenuma, Hiroto Tomita, Masaki Tanaka, Sun Zexu, Yusuke Hashimoto, Tomohiro Matsushita, Yukiharu Uraoka

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[25p-P11-1~16] 13.7 Compound and power devices, process technology and characterization

Fri. Mar 25, 2022 4:00 PM - 6:00 PM P11 (Poster)

4:00 PM - 6:00 PM

[25p-P11-4] Analysis of GaO_x Layer at Al₂O₃/GaN Interface using Photoelectron Holography

〇Shingo Kuwaharada¹, Mutsunori Uenuma¹, Hiroto Tomita¹, Masaki Tanaka¹, Sun Zexu¹, Yusuke Hashimoto¹, Tomohiro Matsushita¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:GaN, Interface

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Presentation information

[25p-P11-1~16] 13.7 Compound and power devices, process technology and characterization

[25p-P11-4] Analysis of GaOx Layer at Al2O3/GaN Interface using Photoelectron Holography

[25p-P11-4] Analysis of GaO_x Layer at Al₂O₃/GaN Interface using Photoelectron Holography