[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

△ [22a-E302-8] Device fabrication and characterization of AlGaInN/GaN HEMTs on single-crystal AlN substrate

〇(M1)Sakura Tanaka¹, Aiyoshi Inoue¹, Tomoyuki Kawaide¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

Keywords:HEMT, GaN, Group-III nitrides

In this study, we have grown GaN-HEMT structures with a quaternary AlGaInN barrier layer by MOCVD on a single-crystal AlN substrate, and fabricated devices and evaluated their basic performance.
The fabricated devices showed good transistor characteristics, with an ON resistance of 8.8 Ωmm and a maximum mutual conductance of 120 mS/mm, with no negative resistance in a large power range. In addition, it showed a high field-effect mobility (channel mobility) of up to 1760 cm²/Vs.