[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

[22a-E302-9] Isolation of N-polar GaN HEMT by TMAH solution

〇Takahiro Arai¹, Tomoya Aota¹, Isao Makabe², Ken Nakata², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd)

Keywords:GaN HEMT

Wet solution using TMAH is expected to reduce process damage regarding of dry etching and have merit of process simplicity for isolation of GaN HEMTs. In this study, we investigated the isolation process using TMAH and fabricated N-polar GaN HEMT devices. We obtained sufficient resistance values exceeding 10¹¹ Ω between the isolation gaps treated with TMAH solution. From the fabricated N-polar GaN HEMTs, I_{D max} = 1.03 A/mm and R_on = 3.5 Ωmm are obtained. These results suggested that TMAH solution is effective for isolation process for N-polar GaN HEMTs.