Fabrication and Characterization of N-Polar AlGaN/AlN High Electron Mobility Transistors

Shunsuke Matsuda, Daisuke Inahara, Wataru Matsumura, Lu You, Kazuya Ataka, Kouki Hanasaku, Yongzhao Yao, Yukari Ishikawa, Satoshi Kurai, Narihito Okada, Yoichi Yamada, Kazuyuki Tadatomo

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

Tue. Mar 22, 2022 9:00 AM - 12:15 PM E302 (E302)

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

11:30 AM - 11:45 AM

[22a-E302-10] Fabrication and Characterization of N-Polar AlGaN/AlN High Electron Mobility Transistors

〇Shunsuke Matsuda¹, Daisuke Inahara¹, Wataru Matsumura¹, Lu You¹, Kazuya Ataka¹, Kouki Hanasaku¹, Yongzhao Yao², Yukari Ishikawa², Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.JFCC)

Keywords:N-Polar, high electron mobility transistors, AlGaN/GaN