Considerations for aggregation of self-interstitials in Si crystal

Eiji Kamiyama, Yusuke Noda, Masato Ohbitsu, Takuto Ushiro, Tatsuya Yokoi, Koji Sueoka

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[26a-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

Sat. Mar 26, 2022 9:00 AM - 12:00 PM E104 (E104)

Hidetoshi Suzuki(Miyazaki Univ.), Haruo Sudo(GlobalWafers), Yuji Mukaiyama(STR Japan)

9:45 AM - 10:00 AM

[26a-E104-4] Considerations for aggregation of self-interstitials in Si crystal

〇Eiji Kamiyama¹, Yusuke Noda¹, Masato Ohbitsu², Takuto Ushiro², Tatsuya Yokoi³, Koji Sueoka¹ (1.Faculty of Computer Science and Systems Engineering, Okayama Pref. Univ., 2.Graduate School of Computer Science and Systems Engineering, Okayama Pref. Univ., 3.Nagoya Univ.)

Keywords:silicon, self-interstitials, aggregation

Siウェーハ中の格子間Si原子(I)の凝集現象の初期に着目し，Iが2個隣接して存在する時の様々な形態について，第一原理計算により得られた結果を報告する．