The 69th JSAP Spring Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26a-E202-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 9:00 AM - 11:30 AM E202 (E202)

Takumi Ikenoue(Kyoto Univ.)

9:00 AM - 9:15 AM

[26a-E202-1] Conformal deposition of TiO2 within microcavity holes by mist-CVD from Ti(acac)4

〇Kojun Yokoyama1, Faruk Hossain1, Hajime Shirai1 (1.Saitama Univ.)

Keywords:Mist-CVD, microcavity holes, TiO2

So far, we reported the preparation of AlOx, TiO2 and Al1-xTixO3 thin films from Al(acac)3 and Ti(acac)4 by mist CVD. In particular, we reported that the DC bias Vm applied to the mesh electrode during the mist transport enables the mist to be finer and faster, which is effective in densifying the film, reducing the defect density at the Si interface, and improving the carrier transport properties. In the present study, we investigate the effect of Vm on TiO2 conformal deposition within microcavity holes.