Deep UV LEDs with graded p-AlGaN layer and p-Al0.4Ga0.6N contact layer

Rie Iwatsuki, Maho Fujita, Hisanori Ishiguro, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Kengo Nagata, Koji Okuno, Yoshiki Saito

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[26a-E203-1~11] 15.4 III-V-group nitride crystals

Sat. Mar 26, 2022 9:00 AM - 12:00 PM E203 (E203)

Maki Kushimoto(Nagoya Univ.), Kentaro Nagamatsu(Tokushima Univ.)

11:00 AM - 11:15 AM

△ [26a-E203-8] Deep UV LEDs with graded p-AlGaN layer and p-Al0.4Ga0.6N contact layer

〇Rie Iwatsuki¹, Maho Fujita¹, Hisanori Ishiguro¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Kengo Nagata², Koji Okuno², Yoshiki Saito² (1.Meijo Univ., 2.TOYODA GOSEI)

Keywords:semiconductor

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