The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[26p-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

Sat. Mar 26, 2022 1:30 PM - 4:30 PM E104 (E104)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Hiroyuki Tsubota(GlobalWafers Japan)

4:00 PM - 4:15 PM

[26p-E104-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(20) Database of local vibration modes of N-complexes

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Pref. Univ. Radiation Research Center)

Keywords:silicon crystal, nitrogen, infrared absorption

Nitrogen makes many complexes with oxygen (O) and intrinsic point defects of vacancy (V) and self-interstitial (I). The complexes were found and assigned by infrared absorption spectroscopy (IR) of local vibration modes (LVM). More than 15 complexes and 20 LVMs are summarized in a Table as the database.: NN-O group, NO-O group, Ni-O group, VNs, VNN, and VVNN. Some LVMs are not assigned yet. Rough estimation of complex concentration in as-grown Si is shown in the Table (for total concentration of 4x1015/cm3, solubility limit at melting point). Concentration of seven species in as-grown Si is estimated.