The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[26p-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

Sat. Mar 26, 2022 1:30 PM - 4:30 PM E104 (E104)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Hiroyuki Tsubota(GlobalWafers Japan)

4:15 PM - 4:30 PM

[26p-E104-11] Measurement of carbon concentration in silicon crystal
(24) Infrared absorption measurement using the internet and template

〇Naohisa Inoue1, Shuichi Okuda1, Shuichi Kawamata1 (1.Osaka Pref. Univ. Radiation Research Center)

Keywords:silicon crystal, carbon concentration, infrared absorption

Concentration of carbon in Si is measured by infrared absorption following the standard. The standard, however, is not enough to give necessary detailed procedures. Moreover, it is always older than the advanced technique (present Carbon Standard was established in 1990). On the other hand, the advanced procedures are open usually through papers or conferences, which factory engineers do not access. We have transferred the novel techniques through the round robin test at the revision of the standard (1980’, 1990’, 2010’). As the internet advances, we try the next step. (1) Assistance of the measurement from a website: We are providing the information on a website, summarized from our 24 talks and abstracts from the Japan Society of Applied Physics, accessible on the internet. (2) Spectrum processing using a template from a website: Modern measurement procedure includes advanced processing of spectrum. It is most easy to do it using a template implemented with the procedures in steps.