2:15 PM - 2:30 PM
[26p-E104-4] Analysis of μ-PCD Decay Curve Considering Surface Recombination
Keywords:semiconductor, silicon wafer, metal contamination
Advanced image sensors require extremely low metal contamination in silicon wafers for high device performance.
μ-PCD (Microwave Photoconductivity Decay) is a choice of lifetime measurement method for the evaluation of metal contamination in silicon wafers.
In the case of the very low metal contamination, however, the lifetime of μ-PCD is not properly measured because the μ-PCD decay curves are heavily influenced by the surface recombination effect.
So the conventional method which calculates lifetime from μ-PCD decay curves cannot accurately estimate the lifetime in wafers with very low metal contamination.
In this report, we have investigated a new practical method which takes into account surface recombination for lifetime measurement.
It has been shown that the method can simulate the decay curves more accurately in wafers with the very low metal contamination.
μ-PCD (Microwave Photoconductivity Decay) is a choice of lifetime measurement method for the evaluation of metal contamination in silicon wafers.
In the case of the very low metal contamination, however, the lifetime of μ-PCD is not properly measured because the μ-PCD decay curves are heavily influenced by the surface recombination effect.
So the conventional method which calculates lifetime from μ-PCD decay curves cannot accurately estimate the lifetime in wafers with very low metal contamination.
In this report, we have investigated a new practical method which takes into account surface recombination for lifetime measurement.
It has been shown that the method can simulate the decay curves more accurately in wafers with the very low metal contamination.