[26p-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

[26p-E104-8] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (Ⅳ)
– Effect of carbon on gettering capability in Si-based molecular ion implantation –

〇Ryo Hirose¹, Takeshi Kadono¹, Ayumi Onaka-Masada¹, Ryosuke Okuyama¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:Silicon wafer, Gettering, ion implantation

We have been developing a new proximity gettering technique using molecular ion implantation that can contribute to the high sensitivity of CMOS image sensors. We have shown that the silicon-based molecular ion implantation technique, in which hydrocarbon (C2Hy) and silicon-hydride (SiHx) ions are implanted in a mixture, can achieve high gettering capability even under low carbon dosage conditions. In this presentation, we investigated the effect of hydrocarbon molecular ions on the gettering capability of the silicon-based molecular ion implantation technique.