[26p-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

[26p-E104-9] Quality of silicon substrate and point defects
(7) Six fundamental equation sets for understanding and control of defects

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ. Radiation Research Center)

Keywords:silicon crystal, defect, point defect

History of research on Si is divided into 5 periods: 1)Tr&IC 1955-, 2)IC chip 1975-, 3)system on Si 1995-, 4)Power device 2005-, 5)solar device 2015-. In the 20 th century, Si devices served as the neurons of the IT world. In the 21 st century, in addition to IT world, they are the key components of the sustainable earth. Behavior of impurities, point defects and grown-in defects has been understood by the following six fundamental equation sets. They serve as the base for the defect control in Si substrates for all devices. (1) mass action law, (ii) classical nucleation theory, (iii) diffusion equation including the contribution from point defects, (iv) Voronkov criterion, (v) stress effect and (vi) group sum constant theorem.