The 69th JSAP Spring Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 1:00 PM - 4:45 PM E202 (E202)

Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)

4:15 PM - 4:30 PM

▲ [26p-E202-13] Determination of Lattice Constants of High-quality Monoclinic β-Ga2O3 Single Crystals by Precise X-ray Diffraction Measurements

〇(M2)Muhidul Islam Chaman1, Sayleap Sdoeung1, Makoto Kasu1 (1.SAGA UNIV.)

Keywords:beta-gallium oxide, X-ray diffraction, lattice parameter

Beta-Gallium Oxide (β-Ga2O3) is an ultra-wide bandgap semiconductor material that has a bandgap energy of about 4.5 eV and a breakdown electric field of about 8 MV/cm, which makes this material preferable for high-power electronic devices. To design the layered material for electronic devices, it is crucial to determine the accurate lattice parameters of the crystal.
In this study, we conducted the 2θ/ω scan for symmetric and asymmetric diffraction conditions and calculated the lattice parameters a, b, c, and β of the unit cell precisely.