[26p-E202-1~14] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [26p-E202-13] Determination of Lattice Constants of High-quality Monoclinic β-Ga₂O₃ Single Crystals by Precise X-ray Diffraction Measurements

〇(M2)Muhidul Islam Chaman¹、Sayleap Sdoeung¹、Makoto Kasu¹ (1.SAGA UNIV.)

キーワード：beta-gallium oxide, X-ray diffraction, lattice parameter

Beta-Gallium Oxide (β-Ga₂O₃) is an ultra-wide bandgap semiconductor material that has a bandgap energy of about 4.5 eV and a breakdown electric field of about 8 MV/cm, which makes this material preferable for high-power electronic devices. To design the layered material for electronic devices, it is crucial to determine the accurate lattice parameters of the crystal.
In this study, we conducted the 2θ/ω scan for symmetric and asymmetric diffraction conditions and calculated the lattice parameters a, b, c, and β of the unit cell precisely.