[26p-E202-1~14] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [26p-E202-8] Investigation of Conduction Band Offset at n-Si/n-Ga₂O₃ Heterojunction Fabricated by Surface-Activated Bonding

〇Zhenwei Wang¹、Daiki Takatsuki²、Jianbo Liang²、Takahiro Kitada¹、Naoteru Shigekawa²、Masataka Higashiwaki¹ (1.NICT、2.Osaka City Univ.)

キーワード：gallium oxide, heterojunction, surface-activated bonding

We present the investigation of conduction band offset (ΔE_C) at n-Si/n-Ga₂O₃ heterojunctions fabricated by surface-activated bonding. The energy barrier heights (qφ_b) at the Si/Ga₂O₃ heterointerface for different reverse voltages (V_rev) were analyzed based on current density–voltage characteristics for the measurement temperature range of 23°C–200°C. The qφ_b decreased with decreasing V_rev and saturated at around 0.25 eV for V_rev < –9 V. The ΔE_C at the heterointerface was estimated to be 0.18 eV from the V_rev dependence of qφ_b.