[26p-E206-1~14] CS.6 Code-sharing Session of 6.5 & 7.6

△ [26p-E206-10] Characterization of Zr and Ti NEG films deposited by UHV sputtering

〇(M2)Ryosuke Tsuchida¹, Md. Suruz Mian¹, Takeo Nakano¹, Takashi Kikuchi², Kazuhiko Mase^2,3 (1.Seikei Univ., 2.KEK, 3.SOKENDAI)

Keywords:thin film, vacuum, NEG

Non-evaporable getter (NEG) denotes a group of materials that can be activated by heating under ultrahigh vacuum (UHV) and can pump residual gases at room temperature. Recently, single metallic Zr or Ti thin films were reported to work as NEG with activation temperature of about 200 ℃. In this study, a zirconium or a titanium thin film deposited by sputtering onto substrates with different sizes and structures. They were baked at 150 ~ 200℃ for 12 ~ 24 hours under UHV and tested their pumping capabilities. Although pumping speed for H2 of the substrates was below the detection limit, the evacuation profile of the measurement system suggested that the Zr or Ti thin films can pump H₂O and CO. We will also report the pumping properties for CO of the blank flange substrate with Ti deposited by sputtering method.