Sayleap Sdoeung

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 1:30 PM - 6:15 PM E102 (Building No. 12)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:30 PM - 5:45 PM

▼ [15p-E102-15] Killer Defects Responsible for Leakage Current in HVPE (001) β-Ga2O3 SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

〇(D)Sayleap Sdoeung¹, Kohei Sasaki², Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology)