Tomoyuki Kawaide

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Speaker, Author, Co-Author

Fri. Mar 17, 2023 1:00 PM - 6:00 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

1:45 PM - 2:00 PM

△ [17p-A301-4] AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate(Ⅱ)

〇Tomoyuki Kawaide¹, Sakura Tanaka¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

2:00 PM - 2:15 PM

[17p-A301-5] Fabrication of high AlN ratio Al_0.7Ga_0.3N channel HFETs on single-crystal AlN substrates

〇Tomoyuki Kawaide¹, Sakura Tanaka¹, Yoshinobu Kometani¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)