Naohisa Inoue

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 1:30 PM - 4:45 PM D511 (Building No. 11)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

4:00 PM - 4:15 PM

[15p-D511-9] Quality of silicon substrate and point defects (9) Non-uniformity of lattice parameter and carbon concentration in Avogadro crystal

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ. Radiation Research Center)

4:15 PM - 4:30 PM

[15p-D511-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(22) Standard measurement procedure of N-complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ. Radiation Research center)

4:30 PM - 4:45 PM

[15p-D511-11] Measurement of carbon concentration in silicon crystal
(26) Standard infrared absorption measurement procedure for single- and poly-Si for industry and science

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Metropolitan Univ. Radiation Research center)