Johji Nishio

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 9:30 AM - 11:30 AM A301 (Building No. 6)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

11:00 AM - 11:15 AM

[15a-A301-7] Effect of basal plane dislocation structure on 1SSF expansion rate in 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)