Norihiro Hoshino

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 1:00 PM - 4:45 PM A301 (Building No. 6)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

2:15 PM - 2:45 PM

[15p-A301-6] [The 44th Paper Award Speech] Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate
by high-temperature gas-source method

〇Norihiro Hoshino¹, Isaho Kamata¹, Takahiro Kanda², Yuichiro Tokuda², Hironari Kuno², Hidekazu Tsuchida¹ (1.CRIEPI, 2.MIRISE Technologies Corporation)