Motohisa Usagawa

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 1:00 PM - 6:00 PM B401 (Building No. 2)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[15p-B401-1~18] 15.4 III-V-group nitride crystals

5:15 PM - 5:30 PM

△ [15p-B401-16] A novel fabrication technique of 100 μm cavity GaN-based edge emitting laser diodes using epitaxial lateral overgrowth on Si substrate

〇Motohisa Usagawa¹, Yoshinobu Kawaguchi¹, Kentaro Murakawa¹, Akiko Komoda¹, Yuuta Aoki¹, Takeshi Yokoyama¹, Mizuki Tonomura¹, Kazuma Takeuchi¹, Takeshi Kamikawa¹ (1.Kyocera)

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