14:45 〜 15:00 ▼ [15p-B409-7] Ar/N2-plasma nitridation process for LaBxNy tunnel layer formation on pentacene-based floating-gate memory utilizing N-doped LaB6 metal and high-k LaBxNy insulator 〇(DC)EUNKI HONG1、Shun-ichiro Ohmi1 (1.Tokyo Inst. of Technology)