Hikaru Hoshikawa

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 1:30 PM - 6:15 PM E102 (Building No. 12)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM

△ [15p-E102-10] Effect of annealing temperature and composition ratio on electrical characteristics of In-Ga-O thin-film transistor

〇Hikaru Hoshikawa¹, Takanori Takahashi¹, Mutsunori Uenuma¹, Yukiharu Uraoka¹ (1.NAIST)