Osamu Ueda

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Speaker, Author, Co-Author

Thu. Mar 16, 2023 9:30 AM - 11:45 AM A205 (Building No. 6)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:15 AM - 11:30 AM

[16a-A205-7] Structural evaluation of GaAs_1-xBi_x thin film on (001)GaAs substrate (1)TEM evaluation of defects in annealed LTG-GaAs_1-xBi_x thin film

〇Osamu Ueda¹, Noriaki Ikenaga², Yukihiro Horita³, Yuto Takagaki³, Fumitaka Nishiyama³, Mitsuki Yukimune⁴, Fumitaro Ishikawa⁵, Yoriko Tominaga³ (1.Meiji Univ., 2.Kanazawa Inst. Tech., 3.Hiroshima Univ., 4.Ehime Univ., 5.Hokkaido Univ.)

11:30 AM - 11:45 AM

[16a-A205-8] Structural evaluation of GaAs_1-xBi_x thin film on (001)GaAs substrate (2)TEM evaluation of defects in GaAs_1-xBi_x thin film obtained by solid-phase epitaxy

Thu. Mar 16, 2023 1:30 PM - 4:45 PM E102 (Building No. 12)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:45 PM - 2:00 PM

[16p-E102-2] TEM characterization of defects in κ-(In_xGa_1-x)₂O₃ thin film grown on (001) FZ-grown ε-GaFeO₃ substrate by mist CVD

〇Osamu Ueda¹, Hiroyuki Nishinaka², Noriaki Ikenaga³, Noriyuki Hasuike², Masahiro Yoshimoto² (1.Meiji Univ., 2.Kyoto Inst. Tech., 3.Kanazawa Inst. Tech.)