Nahoto Funaki

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Speaker, Author, Co-Author

Thu. Mar 16, 2023 9:30 AM - 12:00 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[16a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM

[16a-A301-4] DFT study on effect of NO annealing on mobility at SiC/SiO₂with atomic scale steps

〇Nahoto Funaki¹, Kazuma Yokota¹, Mitsuharu Uemoto¹, Takuji Hosoi², Tomoya Ono¹ (1.Kobe Univ., 2.Kwansei Gakuin Univ.)