Yang Tianlin

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Speaker, Author, Co-Author

Thu. Mar 16, 2023 9:30 AM - 12:00 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[16a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

10:30 AM - 10:45 AM

▼ [16a-A301-5] Understandings of the kinetics of N-incorporation and N-removal reactions for the 4H-SiC surface using the SiC consumption rate as an essential factor

〇(D)Yang Tianlin¹, Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.School of Frontier Sci. , The Univ. of Tokyo)